apr . 20 1 6 . version 1. 4 magnachip semiconductor ltd . 1 m du1511 C single n - channel trench mosfet 30v ? absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c i d 100. 0 a t c = 70 o c 94.0 t a =25 o c 36.1 (3) t a = 70 o c 28.8 (3) pulsed drain current i dm 400 a power dissipation t c =25 o c p d 78.1 w t c = 70 o c 50.0 t a =25 o c 5.5 (3) t a = 70 o c 3.5 (3) single pulse avalanche energy (2) e as 287 mj junction a nd storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) steady state r ja 22.7 o c/w thermal resistance, junction - to - case steady state r jc 1.6 mdu1511 single n - channel trench mosfet 30v, 100.0 a, 2. 4 m features ? v ds = 30v ? i d = 100 a @v gs = 10v ? r ds(on) < 2.4 m @v gs = 10v < 3.3 m @v gs = 4.5v ? 100% uil tested ? 100% rg tested general description the mdu1511 uses advanced magnachip s mosfet technology, which provides high performance in on - state resistance, fast switching performance and excellent quality. mdu1511 is suitable device for dc/dc converter and general purp ose applications. powerdfn 56 s s s g g s s s d d d d d d d d d g s
apr . 20 1 6 . version 1. 4 magnachip semiconductor ltd . 2 m du1511 C single n - channel trench mosfet 30v ordering information part number temp. range package packing quantity rohs status mdu1511 rh - 55~150 o c power dfn 56 tape & reel 3000 units halogen free electrical characteris tics (t j = 25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.3 1.8 2.7 drain cut - of f current i dss v ds = 30v, v gs = 0v - - 1 a t j =55 o c - - 5 gate leakage current i gss v gs = 20v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = 10v, i d = 28 a - 2.0 2.4 m t j =125 o c - 2.9 3.5 v gs = 4.5v, i d = 2 4 a - 2.7 3.3 forward transconductance g fs v ds = 5v, i d = 10a - 45 - s dynamic characteristics total gate charge q g(10v) v ds = 15v, i d = 2 8 a, v gs = 10v 38.8 51.8 64.8 nc total gate charge q g(4.5v) 18.7 25.0 31.3 gate - source charge q gs - 9.9 - gate - drain charge q gd - 9.4 - input capacitance c iss v ds = 15v, v gs = 0v, f = 1.0mhz 2510 3347 4184 pf reverse transfer capacitance c rss 246 328 410 output capacitance c oss 490 653 817 turn - on delay time t d(on) v gs = 10v, v ds = 1 5 v, i d = 2 8 a, r g = 3.0 - 11.2 - ns rise time t r - 23.2 - turn - off delay time t d(off) - 45.6 - fall time t f - 18.6 - gate resistance rg f=1 mhz - 1.0 2 .0 drain - source body diode characteristics source - drain diode forward voltage v sd i s = 2 8 a, v gs = 0v - 0.8 1.1 v body diode reverse recovery time t rr i f = 2 8 a, dl/dt = 100a/s - 33.8 50.7 ns body diode reverse recovery charge q rr - 22.3 33.5 nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7) 2. e as is tested at starti ng tj = 25 , l = 0. 1 mh, i as = 42.0 a, v dd = 27v, v gs = 10v 3. t < 10sec.
apr . 20 1 6 . version 1. 4 magnachip semiconductor ltd . 3 m du1511 C single n - channel trench mosfet 30v fig.5 transfer characteristics fig.1 on - reg ion characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source curre nt and temperature 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 25 -i s [a] -v sd [v] 0 1 2 3 4 5 0 4 8 12 16 20 v gs , gate-source voltage [v] t a =25 notes : v ds = 5v i d , drain current [a] -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes : 1. v gs = 10 v 2. i d = 28.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 notes : i d = 28.0a t a = 25 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 10 20 30 40 50 0 1 2 3 4 v gs = 10v v gs = 4.5v drain-source on-resistance [m ? ] i d , drain current [a] 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 50 5.0v v gs = 10v 8.0v 4.0v 3.0v i d , drain current [a] v ds , drain-source voltage [v]
apr . 20 1 6 . version 1. 4 magnachip semiconductor ltd . 4 m du1511 C single n - channel trench mosfet 30v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum sa fe operating area fig.10 maximum drain current vs. case temperature fig.11 transient thermal response curve 0 5 10 15 20 25 0 500 1000 1500 2000 2500 3000 3500 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 i d , drain current [a] t a , case temperature [ ] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ja (t), thermal response t 1 , rectangular pulse duration [sec] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 ms 10 s 1 s 100 ms dc 10 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 35 40 45 50 55 0 2 4 6 8 10 v ds = 15v note : i d = 28a v gs , gate-source voltage [v] q g , total gate charge [nc]
apr . 20 1 6 . version 1. 4 magnachip semiconductor ltd . 5 m du1511 C single n - channel trench mosfet 30v package dimension powerdfn56 (5x6mm) d imensions are in millimeters, unless otherwise specified dimension millimeters min max a 0.90 1.10 b 0.33 0.51 c 0.20 0.34 d1 4.50 5.10 d2 - 4.22 e 5.90 6.30 e1 5.50 6.10 e2 - 4.30 e 1.27bsc h 0.41 0.71 k 0.20 - l 0.51 0.71 0 12
apr . 20 1 6 . version 1. 4 magnachip semiconductor ltd . 6 m du1511 C single n - channel trench mosfet 30v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reser ves the right to change the specifications and circuitry without notice at any time. magnachip does not consider responsibili ty for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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